Maximum voltage/maximum current

10kV/1500A

3kV/1500A

Minimum pulse width

10μs

10 μs

Measurement parameter

Threshold voltage (V(th),Vge(th))

Yes

Yes

Transmission characteristic (ld-Vgs,lc-Vgs)

Yes

Yes

On-resistance (Rds-on,Vce(sat))

Yes

Yes

Gate leakage current (lgss,lges)

Yes

Yes

Output leakage current (ldss,lces)

Yes

Yes

Output feature (ld-Vds,lc-Vce)

Yes

Yes

Breakdown voltage (BVds,BVces)

Yes

Yes

Grid charge (Qg.Qg(th)、Qgs,Qgd,Qsw,Qsync)

Yes

Yes

Grid resistance (Rg)

Yes

Yes

Device capacitance (Ciss,Coss,Coss_eff,Crss,Cgs,Cgd,Cies,Coes,Cres

Yes

Yes

Switching loss

No

Yes

Datasheet characteristics

No

Yes

Automatic IV test switching

Yes

Yes

Automatic CV test switching

Yes

Yes

Automatic IV/CV test switching

No

Yes

GaN current collapse measurement

Yes

No

On-wafer measurement

Yes (IV/CV/Qg/ Current collapse)

Yes (IV)